کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812313 | 1518111 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Field-induced resistance-switching of La0.7Ca0.3MnO3âδ films epitaxially grown on Ir/MgO buffered Si (001) substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Investigated was the epitaxial growth of La0.7Ca0.3MnO3 (LCMO)/Ir/MgO multilayer on silicon substrate, which was prepared by pulsed-laser deposition. The whole growth process of multilayer was in situ monitored by using reflection high-energy electron diffraction (RHEED). The reflection high-energy electron diffraction observations and X-ray diffraction analysis show that the LCMO film can be epitaxially grown on silicon substrate with an out-of-plane alignment of LCMO(001)//Ir(001)//MgO(001)//Si (001). The field-induced polarity-dependent reversible resistance-switching was observed in the Ag-LCMO-Ir sandwich structure with a newly discovered accumulation-like phenomenon. Further characterization through I-V measurements for “ON”-/”OFF”-State shows that the resistance-switching phenomenon occurred in our Ag-LCMO-Ir sandwich structure should be attributed to a carrier-injection-ordering process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 488, Issues 1â2, 22 September 2005, Pages 98-102
Journal: Thin Solid Films - Volume 488, Issues 1â2, 22 September 2005, Pages 98-102
نویسندگان
Tong Lai Chen, Xiao Min Li, Rui Dong, Qun Wang, Li Dong Chen,