Crystallization of silicon films by rapid joule heating method

We report on the crystallization of silicon films by the joule heating method using Cr strip heater. We report on the lateral crystalline grain growth of silicon thin films by induced holes fabricated in Cr strip. A temperature gradient is generated by the holes, which causes lateral crystalline grain growth. The duration of the electrical current flow in the Cr strip heater is 5 μs. The crystallization experiment is evaluated by Raman scattering spectra in particular by analyzing the sharp crystalline TO phonon peak around 517 cm−1.