کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812408 | 1518112 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation and characterization of indium tin oxide thin films for their application as gas sensors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Preparation and characterization of indium tin oxide thin films for their application as gas sensors Preparation and characterization of indium tin oxide thin films for their application as gas sensors](/preview/png/9812408.png)
چکیده انگلیسی
The structural and electrical properties of indium tin oxide (In2O3/SnO2) thin films grown using direct evaporation technique on various substrates at different temperatures were studied. The effect of annealing, of films with different weight percent concentration of SnO2 in In2O3 and of different thickness on the structural and electrical properties were studied and optimized for use as gas sensor. The stability of the films against time and temperature variations was studied. The effect of the catalytic layers on the sensor microstructure and its performance towards the gas sensing application was observed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 487, Issues 1â2, 1 September 2005, Pages 277-282
Journal: Thin Solid Films - Volume 487, Issues 1â2, 1 September 2005, Pages 277-282
نویسندگان
V.S. Vaishnav, P.D. Patel, N.G. Patel,