کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9812429 1518113 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fabrication and I-V characteristics of p-n junctions composed of high-Tc superconductors and La-doped SrTiO3
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Fabrication and I-V characteristics of p-n junctions composed of high-Tc superconductors and La-doped SrTiO3
چکیده انگلیسی
We have fabricated heterojunction structures comprising p-type high-Tc superconductor (YBCO) and n-type La-doped SrTiO3 (La-STO). (001) and (110) oriented-YBCO thin films were prepared on the (001) and (110)-oriented La-STO substrates, respectively, with the pulsed laser deposition technique. X-ray diffraction measurements confirm that the (001) and (110) YBCO thin films are epitaxially grown on the substrates. The fabricated junctions with both orientations show rectifying I-V characteristic, but their behavior are rather different depending on the orientation. The threshold voltages in the forward bias region increase with decreasing temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 486, Issues 1–2, 22 August 2005, Pages 71-74
نویسندگان
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