کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812456 | 1518113 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effect of annealing on SrTiO3 field-effect transistor devices
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have investigated the effect of interface states on the performance of a field-effect transistor composed of a SrTiO3 (100) single crystal as a channel and an amorphous CaHfO3 layer as a gate insulator. The amorphous CaHfO3 gate insulator layer, which was grown at a pressure above 1 mTorr by pulsed laser deposition (PLD), had a breakdown field of over 5 MV/cm. The transistors deposited under “hard” ablation conditions, at a laser fluence of â¼1.2 J/cm2, showed a normally on conducting behavior even at zero gate bias. An annealing treatment was found to decrease the interface conductivity by filling oxygen vacancies and the annealed devices exhibited clear enhancement-type transistor action.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 486, Issues 1â2, 22 August 2005, Pages 195-199
Journal: Thin Solid Films - Volume 486, Issues 1â2, 22 August 2005, Pages 195-199
نویسندگان
Keisuke Shibuya, Tsuyoshi Ohnishi, Takayuki Uozumi, Mikk Lippmaa, Hideomi Koinuma,