کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812520 | 1518115 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High rate (â¼3 nm/s) deposition of dense silicon nitride films at low substrate temperatures (<150 °C) using the expanding thermal plasma and substrate biasing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The deposition of amorphous silicon nitride (a-SiNx:H) films at high deposition rates (â¼3 nm/s) and at low substrate temperatures (<150 °C) has been studied using the expanding thermal plasma technique operated on an Ar-NH3-SiH4 reactant mixture. To increase the atomic density of the films by ion bombardment, low frequency (lf, 400 kHz) and radio-frequency (rf, 13.6 MHz) substrate biasing has been employed during deposition such that the ions are accelerated towards the substrate up to energies of â¼250 eV. From spectroscopic ellipsometry and Rutherford backscattering measurements, it is demonstrated that the film density increases with increasing substrate bias even under these high deposition rate conditions. An increase in film atomic density from 7.6Ã1022 cmâ3 to 8.8Ã1022 cmâ3 has been observed for rf biasing when going from almost zero substrate bias to a bias voltage of â250 V. It is shown that this increased film density reduces the oxygen content in the a-SiNx:H caused by post-deposition oxygen and/or moisture permeation by more than 50%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 484, Issues 1â2, 22 July 2005, Pages 46-53
Journal: Thin Solid Films - Volume 484, Issues 1â2, 22 July 2005, Pages 46-53
نویسندگان
F.J.H. van Assche, W.M.M. Kessels, R. Vangheluwe, W.S. Mischke, M. Evers, M.C.M. van de Sanden,