کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812590 | 1518116 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of low temperature photo-assisted metal-organic chemical vapor deposited copper films using hexafluoroacetylacetonate copper(I) trimethylvinylsilane as precursor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of low temperature photo-assisted metal-organic chemical vapor deposited copper films using hexafluoroacetylacetonate copper(I) trimethylvinylsilane as precursor Characterization of low temperature photo-assisted metal-organic chemical vapor deposited copper films using hexafluoroacetylacetonate copper(I) trimethylvinylsilane as precursor](/preview/png/9812590.png)
چکیده انگلیسی
This work demonstrated for the first time low temperature copper (Cu) film deposition by photo-assisted metal-organic chemical vapor deposition (photo-assisted MOCVD) using hexafluoroacetylacetonate copper(I) trimethylvinylsilane (referred to as Cu(hfac)(tmvs)) as precursor. This work found that photo-assisted MOCVD Cu films can be deposited on TaN/tetra-ethylorthosilicate(TEOS)-oxide/Si but not on TEOS-oxide/Si wafers at temperatures as low as 100 °C. Cu films grown by photo-assisted MOCVD from Cu(hfac)(tmvs) at 125 °C exhibit good qualities, including acceptable electromigration lifetime, lower carbon contamination at the Cu film surface, and excellent step-coverage and trench-filling abilities.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 483, Issues 1â2, 1 July 2005, Pages 10-15
Journal: Thin Solid Films - Volume 483, Issues 1â2, 1 July 2005, Pages 10-15
نویسندگان
You-Lin Wu, Ming-Hsuan Hsieh, Huey-Liang Hwang,