Characterization of low temperature photo-assisted metal-organic chemical vapor deposited copper films using hexafluoroacetylacetonate copper(I) trimethylvinylsilane as precursor

This work demonstrated for the first time low temperature copper (Cu) film deposition by photo-assisted metal-organic chemical vapor deposition (photo-assisted MOCVD) using hexafluoroacetylacetonate copper(I) trimethylvinylsilane (referred to as Cu(hfac)(tmvs)) as precursor. This work found that photo-assisted MOCVD Cu films can be deposited on TaN/tetra-ethylorthosilicate(TEOS)-oxide/Si but not on TEOS-oxide/Si wafers at temperatures as low as 100 °C. Cu films grown by photo-assisted MOCVD from Cu(hfac)(tmvs) at 125 °C exhibit good qualities, including acceptable electromigration lifetime, lower carbon contamination at the Cu film surface, and excellent step-coverage and trench-filling abilities.