کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812594 | 1518116 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Initial growth of chemical-vapor-deposited Ru from bis(hexafluoroacetylacetonate)dicarbonyl ruthenium
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Initial growth of chemical-vapor-deposited Ru from bis(hexafluoroacetylacetonate)dicarbonyl ruthenium Initial growth of chemical-vapor-deposited Ru from bis(hexafluoroacetylacetonate)dicarbonyl ruthenium](/preview/png/9812594.png)
چکیده انگلیسی
Deposition of ruthenium (Ru) was done using chemical vapor deposition with bis(hexafluoroacetylacetonate)dicarbonyl ruthenium (Ru(hfac)2(CO)2) as the precursor, at temperatures, T, ranging from 548â¤Tâ¤623 K. The initial growth behavior on Si (100) surfaces was investigated using atomic force microscopy and X-ray photoelectron spectroscopy. Three-dimensional nucleus growth was observed. For T=573 K and a precursor partial pressure of 1.3Ã10â1 Pa, after 5 min deposition, the nuclei density observed on an H-terminated Si surface of 4.7Ã109 cmâ2 was about three times that observed on an SiO2 surface. Kinetic analysis of nucleation showed a lower activation energy on an H-terminated surface (5 kcal/mole) than that on an oxide surface (11 kcal/mol). As predicted by quantum chemical calculations, the much larger dissociation energy of Ru-hfac (241 kcal/mol) than of Ru-CO (57 kcal/mol) suggests that the deposition is mainly controlled by the hfac dissociation step. Moreover, the existence of adsorbed H was demonstrated to facilitate Ru deposition by removing hfac ligands through the formation of volatile H(hfac).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 483, Issues 1â2, 1 July 2005, Pages 31-37
Journal: Thin Solid Films - Volume 483, Issues 1â2, 1 July 2005, Pages 31-37
نویسندگان
Wei-Yuan Cheng, Lu-Sheng Hong, Jyh-Chiang Jiang, Yun Chi, Chien-Ching Lin,