کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812594 | 1518116 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Initial growth of chemical-vapor-deposited Ru from bis(hexafluoroacetylacetonate)dicarbonyl ruthenium
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Deposition of ruthenium (Ru) was done using chemical vapor deposition with bis(hexafluoroacetylacetonate)dicarbonyl ruthenium (Ru(hfac)2(CO)2) as the precursor, at temperatures, T, ranging from 548â¤Tâ¤623 K. The initial growth behavior on Si (100) surfaces was investigated using atomic force microscopy and X-ray photoelectron spectroscopy. Three-dimensional nucleus growth was observed. For T=573 K and a precursor partial pressure of 1.3Ã10â1 Pa, after 5 min deposition, the nuclei density observed on an H-terminated Si surface of 4.7Ã109 cmâ2 was about three times that observed on an SiO2 surface. Kinetic analysis of nucleation showed a lower activation energy on an H-terminated surface (5 kcal/mole) than that on an oxide surface (11 kcal/mol). As predicted by quantum chemical calculations, the much larger dissociation energy of Ru-hfac (241 kcal/mol) than of Ru-CO (57 kcal/mol) suggests that the deposition is mainly controlled by the hfac dissociation step. Moreover, the existence of adsorbed H was demonstrated to facilitate Ru deposition by removing hfac ligands through the formation of volatile H(hfac).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 483, Issues 1â2, 1 July 2005, Pages 31-37
Journal: Thin Solid Films - Volume 483, Issues 1â2, 1 July 2005, Pages 31-37
نویسندگان
Wei-Yuan Cheng, Lu-Sheng Hong, Jyh-Chiang Jiang, Yun Chi, Chien-Ching Lin,