کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812726 | 1518119 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal and electrical properties of Au/B4C, Ni/B4C, and Ta/Si contacts to silicon carbide
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The role of silicon and boron carbide interface layers on thermal stability and electrical properties of tantalum, gold, and nickel contacts to 6H- and 4H-n-silicon carbide are presented in this report. Thin Ta/Si, Au/B4C, and Ni/B4C layers were deposited on SiC using electron-beam evaporation or sputter-deposition techniques. The structures were annealed either in ultra-high vacuum or in N-H ambient, at temperatures ranging from about 400 to 1150 °C. The samples were characterized using atomic force microscopy for surface topography, auger electron spectrometry for depth profiling, and glancing angle X-ray diffraction for microstructure and phase identification analyses. Transmission line model structures for current-voltage measurements and contact resistance evaluation were prepared using photolithography and lift-off techniques. Our results indicate that Ta in the Ta/SiC system decomposes SiC at about 800 °C, forming tantalum carbide with the accumulation of silicon at the TaC/SiC interface. In the Ta/Si/SiC system decomposition of SiC also occurs about the same temperature resulting in the structure TaC/Si/SiC. The Au/B4C/SiC system appears to be the most thermally stable with the lowest specific contact resistance of about 1Ã10â6 Ω cm2 for samples heat-treated above 1050 °C for 30 min.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 479, Issues 1â2, 23 May 2005, Pages 59-63
Journal: Thin Solid Films - Volume 479, Issues 1â2, 23 May 2005, Pages 59-63
نویسندگان
J.O. Olowolafe, J.S. Solomon, W. Mitchel, W.V. Lampert,