کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812803 | 1518120 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Heteroepitaxy of ZnO film on Si (111) substrate using a 3C-SiC buffer layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Using an especially designed low-pressure metal-organic chemical vapor deposition (LP-MOCVD) system, the SiC buffer layer and ZnO epitaxial films were sequentially deposited on Si (111) substrate to carry out the heteroepitaxy of ZnO film on Si substrate. SiC was chosen as a buffer layer to reduce the lattice mismatch between ZnO and Si. According to the measurement results, it was found that the ZnO/SiC/Si (111) films have much stronger ultraviolet emission and better crystal quality than that of the ZnO/Si (111) films. These results prove that the SiC buffer layer is useful for modulating the lattice mismatch between ZnO and Si and improving the photoelectric properties of the ZnO films. In addition, a structure model has been proposed to explain the influence of SiC buffer layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 478, Issues 1â2, 1 May 2005, Pages 218-222
Journal: Thin Solid Films - Volume 478, Issues 1â2, 1 May 2005, Pages 218-222
نویسندگان
Junjie Zhu, Bixia Lin, Xiankai Sun, Ran Yao, Chaoshu Shi, Zhuxi Fu,