کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812810 | 1518120 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of bias magnetron-sputtered silicon nitride films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of bias magnetron-sputtered silicon nitride films Characterization of bias magnetron-sputtered silicon nitride films](/preview/png/9812810.png)
چکیده انگلیسی
Influence of the deposition parameters and the substrate bias voltage on the optical, compositional and the surface properties of DC magnetron-sputtered silicon nitride thin films are studied. Silicon nitride thin films are deposited on silicon (100) and quartz substrates at different partial pressures of nitrogen and discharge currents. The variation in the refractive index and the optical band gap of these films is studied. Compositional variation has been studied using Rutherford backscattering spectroscopy (RBS). Silicon nitride thin films deposited at 3Ã10â2 Pa partial pressure of nitrogen with 2.5 mA/cm2 cathode current density showed an optical band gap of 4.3 eV and refractive index of 2.04 (at 650 nm). Nitrogen to silicon ratio in the film is 1.31, and the roughness of the films is 2.3 nm. Substrate bias during deposition helped in changing the optical properties of the films. Substrate bias of â60 V resulted in films having near stoichiometry with N/Si ratio 1.32, and the optical band gap, refractive index, and the roughness are 4.8 eV, 1.92 and 0.78 nm, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 478, Issues 1â2, 1 May 2005, Pages 256-260
Journal: Thin Solid Films - Volume 478, Issues 1â2, 1 May 2005, Pages 256-260
نویسندگان
S. Guruvenket, Jay Ghatak, P.V. Satyam, G. Mohan Rao,