کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812817 | 1518120 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Application of plasma immersion ion implantation on seeding copper electroplating for multilevel interconnection
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Application of plasma immersion ion implantation on seeding copper electroplating for multilevel interconnection Application of plasma immersion ion implantation on seeding copper electroplating for multilevel interconnection](/preview/png/9812817.png)
چکیده انگلیسی
In this study, an effective seeding technology, plasma immersion ion implantation of palladium (PIII Pd), was proposed to achieve defect-free gap filling for copper electroplating (Cu-ECP). It was found that a threshold dosage (â¼5.2Ã1018 mâ2) of PIII Pd was required to drive Cu-ECP and the dependence of Pd dosage on the implantation time was quasi-linear. The thickness of electroplated copper films increased as the Pd dosage increased. Too high a Pd dosage caused a rough copper film with high resistivity (>10 μΩ cm) while too low a Pd dosage resulted in an insufficient nucleation site for Cu-ECP, leading to poor film adhesion. In addition, a higher substrate bias of PIII was suggested to enhance the gap-filling capability of Cu-ECP and the Cu(111) formation of electroplated copper films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 478, Issues 1â2, 1 May 2005, Pages 293-298
Journal: Thin Solid Films - Volume 478, Issues 1â2, 1 May 2005, Pages 293-298
نویسندگان
Shao-Yu Chiu, Ying-Lang Wang, Shih-Chieh Chang, Ming-Shiann Feng,