کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812955 | 1518123 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Early stage heteroepitaxial growth of SrRuO3 films on SrTiO3 (001) depending on the growth temperature during pulsed laser deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The growth behavior of ultrathin (â¼5 nm) SrRuO3 films prepared by pulsed laser deposition (PLD) on SrTiO3 (001) was investigated particularly as a function of growth temperature mainly using synchrotron X-ray diffraction. At a critical growth temperature (~500 °C), below which no crystallization occurs, an epitaxial SrRuO3 film starts to grow with a broad distribution of single (110) domain along the film growth direction maintaining the epitaxial relationship of SrRuO3[001]/SrTiO3[100] and SrRuO3[â110]SrTiO3[010]. Its in-plane and out-of-plane crystal alignments improve sharply when a higher growth temperature of 600 °C is applied, presumably due to the more thermal energy supplied to the substrate. However, more increase of the growth temperature to 650 °C results in no enhancement of atomic ordering but a rougher surface, suggesting that a careful adjustment in the growth temperature is needed to grow an epitaxially well aligned SrRuO3 film possessing a smooth surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 474, Issues 1â2, 1 March 2005, Pages 44-49
Journal: Thin Solid Films - Volume 474, Issues 1â2, 1 March 2005, Pages 44-49
نویسندگان
Han Cheol Choe, Tae Soo Kang, Jung Ho Je, Jong Ha Moon, Byung-Teak Lee, Sang Sub Kim,