کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9813101 | 1518125 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Quantum confinement effect of nanocrystalline GaN films prepared by pulsed-laser ablation under various Ar pressures
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Pulsed-laser deposition (PLD) was performed under various Ar pressures to prepare nanocrystalline GaN films without substrate heating or any post-annealing treatment. The X-ray diffraction (XRD) pattern and selected area electron diffraction indicated that the deposited films were hexagonal GaN with wurtzite structure. High-resolution transmission electron microscopic observation revealed that the particles in GaN films deposited in Ar ambient gas below 50 Pa were smaller than the exciton Bohr radius of GaN (11 nm). Large blueshifts in optical bandgap of the films deposited at lower Ar pressures were observed, indicating strong quantum confinement effects in small GaN particles.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 471, Issues 1â2, 3 January 2005, Pages 273-276
Journal: Thin Solid Films - Volume 471, Issues 1â2, 3 January 2005, Pages 273-276
نویسندگان
Jong-Won Yoon, Takeshi Sasaki, Cheong Hyun Roh, Seung Hwan Shim, Kwang Bo Shim, Naoto Koshizaki,