کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9813101 1518125 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Quantum confinement effect of nanocrystalline GaN films prepared by pulsed-laser ablation under various Ar pressures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Quantum confinement effect of nanocrystalline GaN films prepared by pulsed-laser ablation under various Ar pressures
چکیده انگلیسی
Pulsed-laser deposition (PLD) was performed under various Ar pressures to prepare nanocrystalline GaN films without substrate heating or any post-annealing treatment. The X-ray diffraction (XRD) pattern and selected area electron diffraction indicated that the deposited films were hexagonal GaN with wurtzite structure. High-resolution transmission electron microscopic observation revealed that the particles in GaN films deposited in Ar ambient gas below 50 Pa were smaller than the exciton Bohr radius of GaN (11 nm). Large blueshifts in optical bandgap of the films deposited at lower Ar pressures were observed, indicating strong quantum confinement effects in small GaN particles.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 471, Issues 1–2, 3 January 2005, Pages 273-276
نویسندگان
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