Molecular beam epitaxy of (Ga,Al)AsSb alloys on InP(0Â 0Â 1) substrates

The aim of this paper is to establish the growth conditions for molecular beam epitaxy (MBE) of (Ga,Al)AsSb alloys lattice-matched to InP(0 0 1) substrate. The effects of the main parameters governing the alloy composition, determined by electron dispersive X-ray analysis (EDX) and high-resolution X-ray diffraction (HRXRD), are studied in detail. In particular, the variation of the composition as a function of the Sb/As flux ratio for different growth temperatures and different As/Ga flux ratios is reported.