
Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults
Keywords: A1 پراش اشعه ایکس; A1. Defects; A1. Stresses; A1. X-ray diffraction; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III–V materials