Keywords: A1 توپوگرافی اشعه ایکس; A1. Stresses; A1. Defects; A1. X-ray topography; A2. Stepanov method; A2. Edge defined film fed growth; B1. Sapphire;
مقالات ISI A1 توپوگرافی اشعه ایکس (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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Keywords: A1 توپوگرافی اشعه ایکس; A1. X-ray topography; A1. Dislocation; A2. Growth from solutions; B1. Aromatic crystal; B1. Trans-stilbene; B2. Organic scintillator
Keywords: A1 توپوگرافی اشعه ایکس; A1. Crystal structure; A1. X-ray diffraction; A1. X-ray topography; A2. Growth from solutions; B1. Lysozyme
Structural characterization of the growth front of physical vapor transport grown 4H-SiC crystals using X-ray topography
Keywords: A1 توپوگرافی اشعه ایکس; A1. Defects; A1. Line defects; A1. X-ray topography; A2. Growth from vapor; B2. Semiconducting materials;
Comparison of the quality of single-crystal diamonds grown on two types of seed substrates by MPCVD
Keywords: A1 توپوگرافی اشعه ایکس; A3. MPCVD; A2. Diamond growth; A1. Dislocations; A1. Defects; A1. X-ray topography;
Characterization of double Shockley-type stacking faults formed in lightly doped 4H-SiC epitaxial films
Keywords: A1 توپوگرافی اشعه ایکس; A1. Crystal structure; A1. Defects; A1. Nanostructures; A1. X-ray topography; A3. Chemical vapor deposition processes; B2. Semiconducting silicon compounds;
Dislocation structure of Ge crystals grown by low thermal gradient Czochralski technique
Keywords: A1 توپوگرافی اشعه ایکس; A1. Characterization; A1. Defects; A1. X-ray topography; B2. Semiconducting germanium;
Characterization of grown-in dislocations in high-quality glucose isomerase crystals by synchrotron monochromatic-beam X-ray topography
Keywords: A1 توپوگرافی اشعه ایکس; A1. Characterization; A1. Defects; A1. X-ray topography; A2. Seed crystals; B1. Proteins;
Study of the defect formation in KDP crystals grown under extremely high supersaturation
Keywords: A1 توپوگرافی اشعه ایکس; A1. Defects; A1. X-ray topography; A2. Growth from solutions; A2. Single crystal growth;
Understanding the microstructures of triangular defects in 4H-SiC homoepitaxial
Keywords: A1 توپوگرافی اشعه ایکس; A1. Characterization; A1. X-ray topography; A1. Optical microscopy; A3. Chemical vapor deposition processes; B2. Semiconducting silicon compounds;
Characterization of stacking faults with emission wavelengths of over 500Â nm formed in 4H-SiC epitaxial films
Keywords: A1 توپوگرافی اشعه ایکس; A1. Crystal structure; A1. Defects; A1. Nanostructures; A1. X-ray topography; A3. Chemical vapor deposition processes; B2. Semiconducting silicon compounds;
Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H-SiC wafers
Keywords: A1 توپوگرافی اشعه ایکس; A1. Doping; A1. Double Shockley stacking faults; A1. Heat treatment; A1. Rhombus-shaped; A1. X-ray topography; B1. 4H-SiC;
Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H-SiC crystals grown by PVT method
Keywords: A1 توپوگرافی اشعه ایکس; A1. Characterization; A1. X-ray topography; A1. Threading mixed dislocations; B2. Silicon carbide;
Growth of high quality mercurous halide single crystals by physical vapor transport method for AOM and radiation detection applications
Keywords: A1 توپوگرافی اشعه ایکس; A1. High resolution X-ray diffraction; A1. X-ray topography; A2. Growth from vapor; A2. Single crystal growth; B1. Halides; B2. Acousto-optic materials;
Twinning in vapour-grown, large volume Cd1−xZnxTe crystals
Keywords: A1 توپوگرافی اشعه ایکس; A1. X-ray topography; A2. Growth from vapour; B1. Tellurides; B2. Semiconducting II-VI materials
CVD growth and properties of boron phosphide on 3C-SiC
Keywords: A1 توپوگرافی اشعه ایکس; B2. Semiconducting III-V materials; A3. Hydride vapor phase epitaxy; A1. Characterization; A1. High resolution X-ray diffraction; A1. X-ray topography; A1. Defects;
Photoelasticy method for study of structural imperfection of ZnGeP2 crystals
Keywords: A1 توپوگرافی اشعه ایکس; A1. Defects; A1. X-ray topography; A2. Single crystal growth; B2. Semiconducting ternary compounds; B3. Nonlinear optical; Photoelasticity method;
Synchrotron X-ray diffraction topography study of bonding-induced strain in silicon-on-insulator wafers
Keywords: A1 توپوگرافی اشعه ایکس; A1. X-ray topography; A1. X-ray diffraction; A1. Interfaces; B2. Semiconducting silicon;
On the impact of twinning on the formation of the grain structure of multi-crystalline silicon for photovoltaic applications during directional solidification
Keywords: A1 توپوگرافی اشعه ایکس; A1. Directional solidification; A1. X-ray topography; A2. Growth from melt; B2. Semiconducting silicon; Electron Backscattered Diffraction; Grain competition;
In situ study the effect of refiner on the microstructure evolution of variable cross-section structure by synchrotron X-ray radiography
Keywords: A1 توپوگرافی اشعه ایکس; A1. Crystal morphology; A1. Dendrites; A1. Refinement; A1. X-ray topography; B1. Alloys
Characterization of low angle grain boundary in large sapphire crystal grown by the Kyropoulos method
Keywords: A1 توپوگرافی اشعه ایکس; A1. Etching; A1. X-ray topography; A2. Kyropoulos method; B1. Sapphire;
The subgrain structure in turbine blade roots of CMSX-4 superalloy
Keywords: A1 توپوگرافی اشعه ایکس; A1. X-ray topography; B1. Superalloys; B3. Turbine blades
Defect structure of a free standing GaN wafer grown by the ammonothermal method
Keywords: A1 توپوگرافی اشعه ایکس; A1. X-ray diffraction; A1. X-ray topography; A1. Defects; A2. Single crystal growth; A2. Growth from solutions; B1. Nitrides
Investigation of single crystal 4H-SiC growth by the Solvent–Laser Heated Floating Zone technique
Keywords: A1 توپوگرافی اشعه ایکس; A1. X-ray diffraction; A1. X-ray topography; A2. Floating zone technique; A2. Traveling solvent zone growth; B1. Silicon carbide; B2. Wide band gap semiconductor
Synchrotron topography studies of the operation of double-ended Frank-Read partial dislocation sources in 4H-SiC
Keywords: A1 توپوگرافی اشعه ایکس; A1. Line defects; A1. Planar defects; A1. X-ray topography; A2. Growth from vapor; B2. Semiconducting silicon compounds;
Temperature-gradient annealing of CdZnTe under Te overpressure
Keywords: A1 توپوگرافی اشعه ایکس; A1. X-ray topography; A1. Defects; A2. Bridgman technique; B1. Cadmium compounds; B2. Semiconducting II-VI materials;
Multi-technique analysis of high quality HPHT diamond crystal
Keywords: A1 توپوگرافی اشعه ایکس; A1. Cathodoluminescence; A1. Doping; A1. FTIR; A1. X-ray topography; A2. HPHT; B1. Diamond
Growth mechanisms and defect structures of B12As2 epilayers grown on 4Â H-SiC substrates
Keywords: A1 توپوگرافی اشعه ایکس; A1. Characterization; A1. Defects; A1. X-ray topography; A3. Heteroepitaxy Growth;
Characterisation of vapour grown CdZnTe crystals using synchrotron X-ray topography
Keywords: A1 توپوگرافی اشعه ایکس; A1. Defects; A1. X-ray topography; A2. Growth from vapour; A3. Vapour phase epitaxy; B2. Semiconducting II-VI materials;
Threading dislocations in n- and p-type 4H–SiC material analyzed by etching and synchrotron X-ray topography
Keywords: A1 توپوگرافی اشعه ایکس; A1. Defects; A1. Doping; A1. Etching; A1. X-ray topography; B1. Silicon Carbide
Influence of doping and non-stoichiometry on the quality of lead iodide for use in X-ray detection
Keywords: A1 توپوگرافی اشعه ایکس; A1. Doping; A1. Characterization; A1. Purification; A1. X-ray topography; A2. Bridgman technique; B2. Semiconducting material
Characterization of the carrot defect in 4H-SiC epitaxial layers
Keywords: A1 توپوگرافی اشعه ایکس; A1. Epitaxial defects; A1. Carrot defect; A1. Line defects; A1. Planar defects; A1. X-ray topography; A1. KOH etching;
Seeded growth of AlN bulk crystals in m- and c-orientation
Keywords: A1 توپوگرافی اشعه ایکس; A1. High resolution X-ray diffraction; A1. Substrates; A1. X-ray topography; A2. Growth from vapor; A2. Seeded vapor growth; B1. Nitrides
Investigation of character and spatial distribution of threading edge dislocations in 4H-SiC epilayers by high-resolution topography
Keywords: A1 توپوگرافی اشعه ایکس; 61.72.Ff; 81.05.HdA1. Characterization; A1. Line defects; A1. X-ray topography; A3. Vapor phase epitaxy; B1. Silicon carbide; B2. Semiconducting materials
Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge
Keywords: A1 توپوگرافی اشعه ایکس; A1. X-ray topography; A1. X-ray diffraction; A1. Interfaces; A1. Crystallites; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting indium gallium phosphide61.72.Ff; 61.72.Lk; 61.72.Mm; 65.40.De; 81.05.Ea; 81.15.Gh
Burgers vector analysis by three-dimensional laser-scattering tomography
Keywords: A1 توپوگرافی اشعه ایکس; 61.05.cf; 61.72.Dd; 61.72.Ff; 61.72.ujA1. Characterisation; A1. Diffraction contrast; A1. Light-scattering tomography; A1. Line defects; A1. X-ray topography
X-ray topography of Ca0.5Sr0.5NdAlO4 single crystal
Keywords: A1 توپوگرافی اشعه ایکس; 61.72.Ff; 61.72.Lk; A1. Solid solutions; A1. X-ray topography;
Highly spin-polarized electron photocathode based on GaAs-GaAsP superlattice grown on mosaic-structured buffer layer
Keywords: A1 توپوگرافی اشعه ایکس; 73.21.Cd; 71.55.Eq; 77.22.Ej; A1. Defects; A1. Spin-polarization; A1. X-ray diffraction; A1. X-ray topography; A3. Superlattices; B2. Semiconducting III-V materials; B3. Photocathode;
Growth striations and dislocations in highly doped semiconductor single crystals
Keywords: A1 توپوگرافی اشعه ایکس; 61.72.Ff; 61.72.Ss; 61.72.LkA1. Characterization; A1. Defects; A1. Segregation; A1. X-ray topography; A2. Bridgman technique; A2. Czochralski method; B2. Semiconducting III–V materials
On the growth of tungsten single crystals of high structural quality
Keywords: A1 توپوگرافی اشعه ایکس; 61.05.cp; 61.72.−y; 61.72.Ff; 81.10.JtA1. Crystal structure; A1. Recrystallization; A1. X-ray diffraction; A1. X-ray topography; A2. Floating zone technique; A2. Single crystal growth; B1. Tungsten
Structural features of Ge(Ga) single crystals grown by the floating zone method in microgravity
Keywords: A1 توپوگرافی اشعه ایکس; 81.10.Mx; 81.05.Cy; 61.72.FfA1. Characterization; A1. Defects; A1. X-ray topography; A2. Floating zone technique; A2. Microgravity conditions; B2. Semiconducting germanium
Non-wetting crystal growth of Mg2Si by vertical Bridgman method and thermoelectric characteristics
Keywords: A1 توپوگرافی اشعه ایکس; A1. X-ray diffraction; A1. X-ray topography; A2. Bridgman technique; A2. Growth from melt; B2. Semiconducting silicon compounds; B2. Thermoelectrics
Crystal growth of micropipe free 4H–SiC on 4H–SiC{033¯8} seed and high-purity semi-insulating 6H–SiC
Keywords: A1 توپوگرافی اشعه ایکس; 81.19.BkA1. Micropipe; A1. Photoluminescence; A1. Sublimation; A1. X-ray topography; B1. 4H–SiC{033¯8}; B1. 6H–SiC
Characterization of bulk grown GaN and AlN single crystal materials
Keywords: A1 توپوگرافی اشعه ایکس; 61.72.Ff; 81.10.Bk; 81.10.Dn; 81.05.Ea; 07.85.Jy; 61.10.Nz; 41.60.ApA1. Defects; A1. High resolution X-ray diffraction; A1. X-ray topography; A2. Single crystal growth; B1. Aluminum nitride; B1. Gallium nitride
Epitaxial growth and characterization of silicon carbide films
Keywords: A1 توپوگرافی اشعه ایکس; 81.15.Gh; 81.10.Bk; 81.15.KkA1. Etching; A1. X-ray diffraction; A1. X-ray topography; A3. Chemical vapor deposition; A3. Vapor growth; B1. Silicon carbide
Dislocations and grain boundaries in semiconducting rubrene single-crystals
Keywords: A1 توپوگرافی اشعه ایکس; 61.66.Hq; 61.72.DdA1. Defects; A1. X-ray topography; A2. Growth from vapor; B1. Organic compounds; B2. Semiconducting materials
X-ray characterization of detached-grown germanium crystals
Keywords: A1 توپوگرافی اشعه ایکس; 61.72.Ff; 81.05.Cy; 81.10.Fq; A1. Defects; A1. X-ray diffraction; A1. X-ray topography; A2. Detached Bridgman technique; B2. Semiconducting germanium;
Impurity-induced defect and its effect on protein crystal perfection
Keywords: A1 توپوگرافی اشعه ایکس; 61.72.Ff; 71.55.Ht; 81.10.Dn; 87.14.EeA1. Biocrystallization; A1. Defects; A1. Etching; A1. Impurities; A1. X-ray Topography; B1. Lysozyme
X-ray topography of SrLaGaO4 single crystals
Keywords: A1 توپوگرافی اشعه ایکس; 61.72.Ff; 61.72.Nn; 61.72.LkA1. Extended defects; A1. X-ray topography; B1. Tetragonal strontium lantanum gallate
White-beam synchrotron topographic study of antiparallel 180° domains in near-stoichiometric LiNbO3 grown from Li2O-rich melt
Keywords: A1 توپوگرافی اشعه ایکس; 61.10; 77.84; 81.05; A1. Defects; A1. X-ray topography; A2. Growth from melt;