Keywords: A3 اپیتاکسی لیزر; A3. Laser epitaxy; B1. Metals; B1. Oxides; B2. Magnetic materials
مقالات ISI A3 اپیتاکسی لیزر (ترجمه نشده)
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Keywords: A3 اپیتاکسی لیزر; A1. X-ray diffraction; A3. Laser epitaxy; B1. Oxides; B1. Perovskites; B1. Titanium compounds;
Ultraviolet emission from MgZnO films and ZnO/MgZnO single quantum wells grown by pulsed laser deposition
Keywords: A3 اپیتاکسی لیزر; A1. Characterization; A3. Laser epitaxy; A3. Quantum wells; B1. Alloys; B1. Oxides; B2. Semiconducting ternary compounds;
Comparative study of ZnO thin film and nanopillar growth on YSZ(1Â 1Â 1) and sapphire (0Â 0Â 0Â 1) substrates by pulsed laser deposition
Keywords: A3 اپیتاکسی لیزر; A1. Substrates; A1. Nanostructures; A1. Morphological stability; A1. Surface structure; A3. Laser epitaxy; B1. Oxides;
Ferroelectric properties of highly c-oriented epitaxial Bi2WO6 thin films
Keywords: A3 اپیتاکسی لیزر; A1. Crystal structure; A1. X-ray diffraction; A3. Laser epitaxy; B2. Ferroelectric materials;
Multiferroic BiFeO3 thin films and nanodots grown on highly oriented pyrolytic graphite substrates
Keywords: A3 اپیتاکسی لیزر; A1. X-ray diffraction; A3. Laser epitaxy; B1. Oxides; B2. Ferroelectric materials;
Growth and interface engineering in thin-film Ba0.6Sr0.4TiO3/SrMoO3 heterostructures
Keywords: A3 اپیتاکسی لیزر; A1. Surfaces; A1. Interfaces; A3. Laser epitaxy; A3. Heterostrostructures; B1. Perovskite oxides;
Monitoring surface roughness during film growth using modulated RHEED intensity oscillations
Keywords: A3 اپیتاکسی لیزر; 00-01; 99-00; A1. Reflection high-energy electron diffraction; A1. Surface processes; A3. Laser epitaxy; B1. Perovskites;
Narrow growth window for stoichiometric, layer-by-layer growth of LaAlO3 thin films using pulsed laser deposition
Keywords: A3 اپیتاکسی لیزر; A1. Defects; A1. Surface structure; A3. Laser epitaxy; B1. Oxides; B1. Perovskites; B2. Dielectric materials
Reduced growth temperature of Bi6FeCoTi3O18 thin films by conductive bottom layers
Keywords: A3 اپیتاکسی لیزر; A1. Substrates; A1. High resolution x-ray diffraction; A3. Laser epitaxy; B1. Oxide
Structure and magnetic properties of spinel-perovskite nanocomposite thin films on SrTiO3 (111) substrates
Keywords: A3 اپیتاکسی لیزر; A1. Crystal structure; A1. Nanostructures; A3. Laser epitaxy; B1. Perovskites; B2. Ferroelectric materials; B2. Magnetic materials
Ferroelectric domain structures of epitaxial CaBi2Nb2O9 thin films on single crystalline Nb doped (1 0 0) SrTiO3 substrates
Keywords: A3 اپیتاکسی لیزر; A1. X-ray diffraction; A3. Laser epitaxy; B2. Ferroelectric materials
Strain effects in epitaxial FeV2O4 thin films fabricated by pulsed laser deposition
Keywords: A3 اپیتاکسی لیزر; A3. Laser epitaxy; B1. Vanadates; B1. Oxides; B2. Magnetic materials
Low temperature growth of europium doped Ga2O3 luminescent films
Keywords: A3 اپیتاکسی لیزر; A1. X-ray diffraction; A3. Laser epitaxy; B1. Oxide; B2. Semiconductor gallium compounds;
Structural and optical property characterization of epitaxial ZnO:Te thin films grown by pulsed laser deposition
Keywords: A3 اپیتاکسی لیزر; A1. Doping; A3. Laser epitaxy; B1. Oxides; B1. Tellurites; B1. Alloys; B2. Semiconducting II-VI materials;
Epitaxial growth of non-polar m-plane AlN film on bare and ZnO buffered m-sapphire
Keywords: A3 اپیتاکسی لیزر; A1. Characterization; A1. Crystal structure; A3. Laser epitaxy; B1. Nitrides
Piezoelectric, ferroelectric properties of multiferroic YMnO3 epitaxial film studied by piezoresponse force microscopy
Keywords: A3 اپیتاکسی لیزر; A1. Atomic force microscopy; A3. Laser epitaxy; B1. Yttrium compound; B2. Ferroelectric materials; B2. Piezoelectric materials
Crystallographic phase separation and band gap of ZnO1âxSx (x=0.1-0.3) alloy thin films grown by pulsed laser deposition
Keywords: A3 اپیتاکسی لیزر; A1. Doping; A3. Laser epitaxy; B1. Alloys; B1. Oxides; B1. Sulfides; B2. Semiconducting II-VI materials;
Pseudo-hexagonal in-plane alignment of rutile (100)Nb:TiO2 on hexagonal (0001)Al2O3 plane
Keywords: A3 اپیتاکسی لیزر; A3. Characterization; A3. Laser epitaxy; B1 Oxides; B1. Semiconducting materials;
Tetragonally strained BiFeO3 thin film on single crystal Rh substrate
Keywords: A3 اپیتاکسی لیزر; A1. X-ray diffraction; A3. Laser epitaxy; B1. Bismuth compounds; B1. Perovskites; B2. Ferroelectric materials;
Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region
Keywords: A3 اپیتاکسی لیزر; A3. Low press. Metalorganic vapor phase epitaxy; A3. Quantum wells; A3. Laser epitaxy; B1. Nitrides; B2. Semiconducting III–V materials
Strain compensation techniques for red AlGaInP-VECSELs: Performance comparison of epitaxial designs
Keywords: A3 اپیتاکسی لیزر; A3. Metalorganic vapor phase epitaxy; A3. Laser epitaxy; B2. Semiconducting III–IV materials; B2. AlGaInP; B3. VECSEL
Fabrication and characterization of textured Bi2Te3 thermoelectric thin films prepared on glass substrates at room temperature using pulsed laser deposition
Keywords: A3 اپیتاکسی لیزر; A1. Nanostructures; A3. Laser epitaxy; B1. Bismuth compounds; B2. Semiconducting materials
Characterization of structure and magnetism in Zn1−x(Cox/Mnx)O epitaxial thin films as a function of composition
Keywords: A3 اپیتاکسی لیزر; A3. Laser epitaxy; B2. Magnetic materials; B1. Oxides; B2. Semiconductor II–VI materials
Surface evolution of NaCl-type cubic AlN films on MgO (100) substrates deposited by laser molecular beam epitaxy
Keywords: A3 اپیتاکسی لیزر; A1. Crystal structure; A1. Surfaces; A3. Laser epitaxy; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
Microstructure evolution of Bi0.4Ca0.6MnO3 epitaxial films with different thickness
Keywords: A3 اپیتاکسی لیزر; A1. Characterization; A1. Surface structure; A3. Laser epitaxy; B1. Perovskites;
Improved dielectric and insulating properties of Ba0.5Sr0.5TiO3 films fabricated by laser molecular-beam epitaxy with active oxygen
Keywords: A3 اپیتاکسی لیزر; A3. Laser epitaxy; B1. Oxides thin film; B2. Dielectric materials; B2. Ferroelectric materials
Buffer-layer-enhanced growth of a single-domain LaB6 (1 0 0) epitaxial thin film on a MgO (1 0 0) substrate via pulsed laser deposition
Keywords: A3 اپیتاکسی لیزر; A1. Crystal structure; A3. Laser epitaxy; A3. Migration enhanced epitaxy; A3. Physical vapor deposition processes; B1. Inorganic compounds; B1. Nanomaterials
Early stages of nanosecond pulsed-laser growth of silicon pillars in vacuum
Keywords: A3 اپیتاکسی لیزر; A1. Surface processes; A1. Surface structure; A2. Growth from melt; A3. Laser epitaxy
Temperature dependent photoluminescence studies of ZnO thin film grown on (1 1 1) YSZ substrate
Keywords: A3 اپیتاکسی لیزر; A1. Characterization; A3. Laser epitaxy; B1. Oxides; B2. Semiconducting materials; B3. Light emitting diodes
Controlling structural quality of ZnO thin film on c-plane sapphire during pulsed laser deposition
Keywords: A3 اپیتاکسی لیزر; A1. Defects; A3. Laser epitaxy; B1. Oxides; B2. Semiconducting II–VI materials
Fabrication of semiconducting SrB6−δ thin films on ultrasmooth sapphire substrates by laser molecular beam epitaxy
Keywords: A3 اپیتاکسی لیزر; A1. Crystal structure; A1. Growth models; A1. Reflection high energy electron diffraction; A3. Laser epitaxy; B1. Inorganic compounds; B2. Semiconducting materials
Fabrication of pure-perovskite PMN–PT thin films on SrTiO3 substrates using pulsed laser deposition
Keywords: A3 اپیتاکسی لیزر; A1. X-ray diffraction; A3. Laser epitaxy; B1. Oxides; B1. Perovskite; B2. Ferroelectric materials
Effect of target-substrate separation on HgCdTe films formed by pulsed laser deposition
Keywords: A3 اپیتاکسی لیزر; A1. Crystal structures; A3. Laser epitaxy; B1. Cadmium compounds; B2. Semiconducting II-VI materials;
Synchrotron X-ray diffraction studies of heteroepitaxial ZnO films grown by pulsed laser deposition
Keywords: A3 اپیتاکسی لیزر; A1. X-ray diffraction; A3. Laser epitaxy; B1. Zinc compounds; B2. Semiconducting II–VI materials; B3. Light emitting diodes
Controlling metal–insulator transition in the hetero-epitaxial VO2/TiO2 bilayer grown on Al2O3
Keywords: A3 اپیتاکسی لیزر; A1. X-ray diffraction; A3. Laser epitaxy; B1. Vanadium dioxide
Growth control of stoichiometry in LaMnO3 epitaxial thin films by pulsed laser deposition
Keywords: A3 اپیتاکسی لیزر; A3. Laser epitaxy; B1. Oxides; B1. Perovskites; B2. Magnetic materials
Epitaxially strained Na0.7CoO2 thin films on SrTiO3 buffer layer
Keywords: A3 اپیتاکسی لیزر; 61.05.cp; 71.30.+h; 72.15.âv; A1. Crystal structure; A1. X-ray diffration; A3. Laser epitaxy; B1. Oxides;
The effect of incident laser energy on pulsed laser deposition of HgCdTe films
Keywords: A3 اپیتاکسی لیزر; 68.55.a; 73.40.Sx; 81.15.−zA1. Crystal structure; A3. Laser epitaxy; B1. Cadmium compounds; B2. Semiconducting II–VI materials
Layer-by-layer growth and growth-mode transition of SrRuO3 thin films on atomically flat single-terminated SrTiO3 (1 1 1) surfaces
Keywords: A3 اپیتاکسی لیزر; 61.14.Hg; 68.55.−a; 81.15.FgA1. Reflection high-energy electron diffraction; A3. Atomic layer epitaxy; A3. Laser epitaxy; B1. Oxides; B1. Perovskites
Optical and electrical properties of CuScO2 epitaxial films prepared by combining two-step deposition and post-annealing techniques
Keywords: A3 اپیتاکسی لیزر; 81.15.Fg; 81.15.Np; 73.61.Le; A1. Characterization; A3. Laser epitaxy; B1. Oxides; B2. Semiconducting ternary compounds;
Influence of pulsed laser deposition rate on the microstructure and thermoelectric properties of Ca3Co4O9 thin films
Keywords: A3 اپیتاکسی لیزر; 61.05.cp; 68.37.Ps; 72.80.Ga; 73.50.LwA1. Atomic force microscopy; A1. Surface structure; A1. X-ray diffraction; A3. Laser epitaxy; B1. Oxides
Growth and structure properties of La1−xSrxMnO3−σ (x=0.2, 0.3, 0.45) thin film grown on SrTiO3 (0 0 1) single-crystal substrate by laser molecular beam epitaxy
Keywords: A3 اپیتاکسی لیزر; 75.47.LxA1. High resolution X-ray diffraction; A1. Stresses; A3. Laser epitaxy; A3. Atomic layer epitaxy; B1. Manganites; B1. Perovskites
Epitaxial growth of copper oxide films by reactive cross-beam pulsed-laser deposition
Keywords: A3 اپیتاکسی لیزر; 81.15.Fg; 68.55.A−; 68.35.bg; 61.05.cpA1. X-ray diffraction; A3. Laser epitaxy; B1. Oxides; B2. Semiconducting materials
Thin film growth and magnetic anisotropy of epitaxial Sr0.775Y0.225CoO3âδ
Keywords: A3 اپیتاکسی لیزر; 75.20.âg; 75.30.Gw; 75.50.ây; 75.60.Ej; A1. X-ray diffraction; A3. Laser epitaxy; B1. Oxides; B2. Ferromagnetic materials;
Microstructure of dielectric LaLuO3 films on (001) SrTiO3 substrates
Keywords: A3 اپیتاکسی لیزر; 68.37.Lp; 68.55.−a; 61.72.Ff; 77.55.+f; 81.15.FgA1. Defects; A3. Laser epitaxy; B1. Perovskites; B2. Dielectric materials
Temperature dependence of La2Hf2O7La2Hf2O7 thin films growth on Si(0 0 1) substrates by pulsed laser deposition
Keywords: A3 اپیتاکسی لیزر; 61.05.cp; 68.37.Og; 81.15.FgA1. Reflection high-energy electron diffraction; A1. X-ray diffraction; A3. Laser epitaxy; B2. Dielectric materials
Non-polar a-plane GaN grown on LaAlO3 (0Â 0Â 1) substrate by pulsed laser deposition
Keywords: A3 اپیتاکسی لیزر; 61.10.Nz; 68.37.âd; 68.37.Lp; 81.15.Fg; A1. X-ray diffraction; A3. Laser epitaxy; B1. Nitride;
Structural properties of ZnO thin films on Si substrate using femtosecond laser deposition
Keywords: A3 اپیتاکسی لیزر; 91.60.Ed; 81.05.Dz; 81.15.Fg; A1. Crystal structure; A3. Laser epitaxy; B1. Zinc compounds; B2. Semiconducting II-VI materials;
Growth and structural analysis of diluted magnetic oxide Co-doped CeO2−δ films deposited on Si and SrTiO3 (1 0 0)
Keywords: A3 اپیتاکسی لیزر; 75.50.Dd; 77.84.Bw; 68.55.−a; 81.15.FgA1. Defects; A1. X-ray diffraction; A3. Laser epitaxy; B1. Oxides; B2. Magnetic materials