کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10136034 | 1645676 | 2018 | 28 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and characterization of ZnSxSe1-x thin films deposited by spray pyrolysis
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, zinc sulphoselenide ZnSxSe1-x; (0.0â¯â¤â¯xâ¯â¤â¯1.0) thin films were grown on glass substrates using a computerized chemical spray pyrolysis. The mechanism of growth and the structural, morphological, compositional, optical and electrical properties were studied. An X-ray diffraction study confirmed that the polycrystalline ZnSxSe1-x thin films had a cubic zinc blende structure with a preferential ã111ã orientation. The shift in the peak <111> direction towards higher 2θ values with increasing sulfur concentration confirmed the formation of a solid solution. The crystallite size was observed to be in the range 18-28â¯nm. Using energy dispersive X-ray spectroscopy, the formation of nearly stoichiometric ZnSxSe1-x thin films was confirmed. The optical band gap increased from 2.84â¯eV to 3.57â¯eV when the composition of the ZnSxSe1-x was changed. The thin films were found to be semiconducting in nature. The observed tunable optical and electrical properties of the ZnSxSe1-x thin films suggest that they can be used for a wide range of optoelectronic applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 664, 31 October 2018, Pages 19-26
Journal: Thin Solid Films - Volume 664, 31 October 2018, Pages 19-26
نویسندگان
Nandkishor M. Patil, Santosh G. Nilange, Abhijit A. Yadav,