Orientation control of epitaxial Ge thin films growth on SrTiO3 (100) by ultrahigh vacuum sputtering

► Crystalline Ge thin films have been grown on SrTiO3 substrate by sputtering. ► Orientation of Ge films can be controlled by the substrate temperature. ► Substrate temperature affects interfacial diffusion. ► Formation of Ge oxide layers at the interface at higher substrate temperatures.