کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10670004 1008846 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Dielectric properties of parylene AF4 as low-k material for microelectronic applications
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Dielectric properties of parylene AF4 as low-k material for microelectronic applications
چکیده انگلیسی
Using dielectric spectroscopy analysis, three relaxation mechanisms have been identified in 60% semi-crystalline parylene AF4 ([-F2C-C6H4-CF2-]n) fluoropolymers. At high temperature, fluorine species located at the electrode/polymer interface involve a space-charge polarization. β-Process assigned to local molecular motions of the C-F dipoles and the γ-relaxation due to local fluctuations of the F2C-C6H4 groups are also evidenced at intermediate and cryogenic temperatures respectively. Space-charge fluorine F−, β and γ relaxations obey an Arrhenius law against temperature with activation energy Ea (F−) = 1.26 eV, Ea (β) = 0.59 eV and Ea (γ) = 0.29 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 7, 31 January 2012, Pages 2493-2497
نویسندگان
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