Electrical transport properties and room-temperature positive magnetoresistance of Fe3O4/a-C/n-Si junctions

► Amorphous carbon layers of different thickness are inserted in Fe3O4/n-Si junctions. ► The current transport in thinner junctions is dominated by thermionic field emission. ► Tunneling is the dominant mechanism for the thicker junctions. ► Room-temperature PMR can be enhanced by increasing a-C layer thickness.