Infrared spectroscopy of Si-O bonding in low-dose low-energy separation by implanted oxygen materials

The effects of the processing conditions on the formation of buried oxide (BOX) layers in low-dose low-energy separation by implanted oxygen materials were investigated by using infrared spectroscopy and transmission electron microscopy. In as-implanted samples, the Si-O-Si stretching frequency increases either with increasing the oxygen dose or with decreasing implantation energy because the oxide composition becomes stoichiometric. However, the plateau frequencies were observed above a certain dose due to the compressive stress in the BOX layers. Upon ramping up to 1100 °C, the compressive stress decreases. Annealing beyond 1100 °C, the out diffusion of oxygen atoms was detected.