کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10672433 | 1009310 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
WO3-doped LiF as gate dielectric for p-channel vertical organic field effect transistor application
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report low voltage operable p-channel vertical organic field effect transistors (VOFETs) using 5,5â´â³-Dihexyl- 2,2â²:5â²,2â³:5â³,2â´:5â´,2â´â²:5â´â²,2â´â³-sexithiophene (DH6T) as organic semiconductor and tungsten trioxide (WO3) doped lithium fluoride (LiF) nano-composite of various concentrations as high-k dielectric. Among the various doping concentrations of WO3, the 5â¯wt% WO3-doped LiF shows the best performance. The gate leakage was effectively reduced from 10â4â¯A/cm2 order to 10â6â¯A/cm2 by the addition of 5â¯wt% WO3-doped LiF as compare to 0â¯wt% WO3-doped LiF, resulted in higher drain current for this device. The best values of threshold voltage, mobility, on/off ratio, trans-conductance and sub-threshold slope for the devices made were estimated to be 0.85â¯V, 0.034â¯cm2/Vs, 105, 60 μS and 0.32â¯V/decade respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 666, 30 November 2018, Pages 156-160
Journal: Thin Solid Films - Volume 666, 30 November 2018, Pages 156-160
نویسندگان
Ritu Verma, C.K. Suman, Ritu Srivastava,