Spray pyrolized Ag–N co-doped p-type ZnO thin films' preparation and study of their structural, surface morphology and opto-electrical properties

This work focused on the fabrication of p-type ZnO material by Ag–N co-doping using spray pyrolysis technique and the characterization of structural, surface morphology and opto-electrical properties. Hall measurements reveal that Ag–N co-doped ZnO thin films are p-type materials and highest mobility is obtained for 2.5 mol% of Ag doping, keeping the concentration of N unchanged. The resistivity of the films depends on doping level and shows a minimum value (ρ ~ 1.59 Ω-cm) with a carrier concentration of 4.09 × 1016 cm− 3 for 2.5 mol% of Ag doping at the deposition temperature of 400 °C. X-ray diffraction study shows a single phase of ZnO up to 2.5 mol% of Ag doping level and after that a phase of silver oxide arises, which confirms that 2.5 mol% of Ag doping level is the optimum condition. The aging effect does not affect the p-type characteristics of the Ag–N co-doped ZnO films.

► Spray pyrolized Ag–N co-doped ZnO films are p-type semiconductor.
► Resistivity is minimum for 2.5 mol% Ag doping level.
► Solubility limit of Ag is 2.5 mol% in Ag–N co-doping system of ZnO.
► Films are highly transparent.