Synthesis of buried layers of β-SiC in Si by multiple energy carbon ion implantations and post thermal annealing

A systematic study has been performed to synthesize buried homogeneous layers of β-SiC by multiple energies (15–65 keV) of carbon ion implantations into Si(100), followed by high temperature thermal annealing. A continuous stoichiometric SiC layer of 170 nm thickness has been formed in the implanted region when the sample was annealed at 1100 °C for 1 h. The formation of a β-SiC thin film has been confirmed by using X-ray diffraction, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy techniques.

► An approach of forming the buried thin film of SiC has been studied.
► Multiple energy carbon ion implantations into Si have been performed.
► Stoichiometric composition of Si and carbon has been formed.
► Thermal annealing at 1100 °C for 1 h results in the formation of β-SiC.