کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1666670 | 1518082 | 2012 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Spectroscopic ellipsometry analysis of TiO2 films deposited by plasma enhanced chemical vapor deposition in oxygen/titanium tetraisopropoxide plasma Spectroscopic ellipsometry analysis of TiO2 films deposited by plasma enhanced chemical vapor deposition in oxygen/titanium tetraisopropoxide plasma](/preview/png/1666670.png)
TiO2 thin films were deposited at low pressure and temperature on silicon substrates using plasma enhanced chemical vapor deposition in oxygen rich O2/titanium tetraisopropoxide inductively coupled radiofrequency plasmas. The influence of substrate bias Vb (|Vb| ≤ 50 V) on the film properties was investigated. The results obtained by fitting ellipsometry spectra in the 1.5–6 eV range, using a three-sublayer physical model, are in good agreement with the film morphology when no bias is applied or Vb = − 10 V. The refractive indices in the transparent range are enhanced at Vb = − 50 V, according to a physical model which only includes a homogenous layer and a top roughness layer. Scanning electron microscopic views show that all the films exhibit a columnar structure, but layer compactness and organization increase with the bias. The film structure evolution as a function of Vb is also evidenced on the refractive index dispersion curves. Complementary X-ray diffraction and Fourier transform infrared spectroscopy measurements show that films are basically amorphous mixed with a small amount of anatase at the floating potential (Vb = 0), whereas applying a bias voltage leads to the enhancement of anatase phase and the appearance of rutile phase (Vb = − 50 V).
► Plasma enhanced chemical vapor deposited TiO2 films
► Biasing effect on the structural and optical film properties
► Ellipsometric modeling with a gradient index sublayer
► Good agreement between ellipsometry analysis and scanning electron microscopy
Journal: Thin Solid Films - Volume 522, 1 November 2012, Pages 366–371