Relaxation in bi-stable resistive states of chemical vapor deposition grown graphene

Reproducible hysteresis in electrical resistance, bi-stable resistive switching effect, and hysteresis in current–voltage between source and drain (I–Vsd) curves are observed in millimeter length scale graphene devices, grown by chemical vapor deposition (CVD), with back gate structure. Strong dependence on the sweeping rate of back gate voltage (Vbg) suggests relaxation of charging and discharging effect in CVD graphene devices. A bi-stable resistance switching is also observed at all Vbg's. Temporal profiles of resistance indicate the charge-trapping characteristics with different relaxation times depending on the charge polarity of adsorbates. In addition, we found I–Vsd curves are dissimilar at different Vbg's where majority of charge carrier is of different type. All observed effects are mainly related to the charging and discharging effect with different relaxation characteristics in CVD-grown graphene at different Vbg.

► Hysteresis in electrical resistance in chemical vapor deposition-grown graphene.
► Bi-stable resistive switching effect in chemical vapor deposition-grown graphene.
► Discharging relaxation times depending on the charge polarity of adsorbates.
► Dissimilar current–voltage curves for different type of majority charge carriers.