Hard a-SiC:H films formed by remote hydrogen microwave plasma chemical vapor deposition using a novel single-source precursor

► a-SiC:H films were produced at various substrate temperatures in the range 30-400 °C. ► Si-carbidic network is formed in the films deposited at high temperatures (> 200 °C). ► The physical, optical, and mechanical properties of a-SiC:H films were examined. ► The film properties are strongly influenced by the content of SiC carbidic bonds. ► The films formed at 300 °C are very hard coatings exhibiting weak photoluminescence.