کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1667229 | 1008847 | 2012 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Effect of oxygen on structural stability of nitrogen-doped germanium telluride films with and without silicon nitride layer Effect of oxygen on structural stability of nitrogen-doped germanium telluride films with and without silicon nitride layer](/preview/png/1667229.png)
Nitrogen-doped germanium telluride (N-GeTe) films with and without silicon nitride (SiN) layer were thermally annealed in an air atmosphere. The SiN layer prevented the oxidation of GeTe films despite the massive in-diffusion of oxygen atoms. The phase transition from cubic to rhombohedral phase occurred only in the air-annealed samples, not in the samples annealed at 2.0 mPa. The in-diffused oxygen is probably the leading cause of this phase transition. N-GeTe films without SiN layer showed an increase in sheet resistance after 1000 min of air annealing; this could be attributable to a phase transition from the cubic GeTe phase to the amorphous germanium oxide and metallic tellurium phases.
► SiN layer prevented oxidation of GeTe despite the massive in-diffusion of oxygen.
► The in-diffused oxygen have a critical role in the changes of crystal structure.
► N-GeTe exhibited phase transition into amorphous Ge oxide and metallic Te phase.
Journal: Thin Solid Films - Volume 520, Issue 11, 30 March 2012, Pages 3910–3913