Influence of carrier injection on resistive switching of CaCu3Ti4O12 thin films with Ni electrode

The influence of electron injection on the electric-pulse-induced resistive switching of perovskite CaCu3Ti4O12 (CCTO) films was studied by current–voltage (I–V) measurements. The electron injection was reduced by annealing the sample in an O2 atmosphere. The switching from the high-resistance state HRS to the low-resistance state LRS by a filamentary mechanism was suppressed when the carrier injection occurs by Poole–Frenkel emission. The interfacial potential barrier plays a crucial role in determining the carrier injection.