کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1667801 1008857 2011 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001)
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001)
چکیده انگلیسی

A study of Ge epilayer growth directly on a Si(001) substrate is presented, following the two temperature Ge layer method. In an attempt to minimize the overall thickness while maintaining a good quality Ge epilayer, we have investigated the effect of varying the thickness of both the low and high temperature Ge layers, grown at 400 °C and 670 °C, respectively, by reduced pressure chemical vapor deposition. We find that the surface of the low temperature (LT) seed layer has a threading dislocation density (TDD) to the order of 1011 cm− 2. On increasing the LT layer thickness from 30 nm to 150 nm this TDD decreases by a factor of 2, while its roughness doubles and degree of relaxation increases from 82% to 96%. Growth of the high temperature (HT) layer reduces the TDD level to around 108 cm− 2, which is also shown to decrease with increasing layer thickness. Both the surface roughness and degree of relaxation reach stable values for which increasing the thickness beyond about 700 nm has no effect. Finally, annealing the HT layer is shown to reduce the TDD, without affecting the degree of relaxation. However, unless a thick structure is used the surface roughness increases significantly on annealing.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 22, 1 September 2011, Pages 7911–7917
نویسندگان
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