کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1668272 | 1008865 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Imposed quasi-layer-by-layer homoepitaxial growth of SrTiO3 films by large area pulsed laser deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The homoepitaxial growth of SrTiO3 (STO) films was investigated by a large-area pulsed laser deposition (PLD), which was in-situ monitored by a high pressure reflective high energy electron diffraction. By combining a conventionally continuous film deposition with a followed interval relaxation, a persistent layer-by-layer (LBL) film growth of more than 100 unit cells STO films was achieved. This interrupted PLD technique could realize persistent LBL film growth at any laser frequency between 1 and 10Â Hz and provides an effective way to fabricate high quality complex oxide films on unit cell scale.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 19, 29 July 2011, Pages 6330-6333
Journal: Thin Solid Films - Volume 519, Issue 19, 29 July 2011, Pages 6330-6333
نویسندگان
Y.Z. Chen, N. Pryds,