کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1668445 | 1008869 | 2011 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Substrate temperature dependence of electrical and structural properties of Ru films Substrate temperature dependence of electrical and structural properties of Ru films](/preview/png/1668445.png)
Microstructures and resistivities of sputtered Ru films were investigated as a function of substrate temperature to obtain a single-layered Ru barrier without a Ta/TaN under layer. High resistivity Ru films with a high density of crevices, which enhances Cu diffusion along the crevices, were formed by the conventional sputtering process, i.e., sputtering at room temperature and annealing at 400 °C–700 °C for 30 min in Ar + 3%H2. But, crevice-free and smooth Ru films with low resistivity, the same as that for the bulk phase, were formed when substrate temperature add sputtering was raised to 700 °C. Ru films formed by this process had (002) preferred orientation and then Cu (111) was formed by plating. This result corresponded to the tendency predicted by ab initio calculations.
Journal: Thin Solid Films - Volume 520, Issue 1, 31 October 2011, Pages 374–379