کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1668861 | 1008876 | 2011 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Correlation between resistivity and oxygen vacancy of hydrogen-doped indium tin oxide thin films Correlation between resistivity and oxygen vacancy of hydrogen-doped indium tin oxide thin films](/preview/png/1668861.png)
Thin films of indium tin oxide (ITO) sputter-deposited by dc-plasma containing deuterium on glass substrate without any heat treatments exhibited gradual lowering in electrical resistivity with increasing the deuterium content [D2] in plasma gas by 1% and then demonstrated a jump in resistivity by further increase of [D2] than 1%. X-ray photoelectron spectroscopy revealed that hydroxyl-bonded oxygen in ITO grew continuingly with [D2]. Deuterium positioned at the interstitial site increased almost quantitatively with increasing [D2]. Rutherford backscattering spectroscopy showed gradual reduction in the oxygen content of ITO with increasing [D2] by 1% and then demonstrated an abrupt increase of the oxygen content with the increase of [D2] than 1%. The films with [D2] < 1% were oxygen deficient, but those with [D2] > 1% were excess of oxygen. The most oxygen deficient film of [D2] = 1% was the most conductive. Behavior in the resistivity with [D2] looks parallel to that in the oxygen content. A lower resistivity of the films corresponded well to oxygen vacancy rather than hydrogen interstitial.
Journal: Thin Solid Films - Volume 519, Issue 11, 31 March 2011, Pages 3557–3561