کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1668870 1008876 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth of GaN films with controlled out-of-plane texture on Si wafers
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Growth of GaN films with controlled out-of-plane texture on Si wafers
چکیده انگلیسی

GaN films were deposited on Si (400) wafers by a pulsed laser deposition technique, and it was shown that out-of-plane texture of the film is controllable although the film and the substrate do not have any interface epitaxy. The texture of the film can be set either in c-axis or a-axis direction, thereby achieving polar or nonpolar film surfaces as desired. The GaN film and Si substrate were found to be separated by a thin amorphous interface layer consisting of Si, Ga, and O atoms, that can enhance the bonding between GaN and Si. This study shows the possibility of depositing GaN films on Si wafers at low cost and the potential of integrating Si based electronics with GaN based optoelectronics.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 11, 31 March 2011, Pages 3608–3611
نویسندگان
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