Epitaxial growth of nonpolar m-plane ZnO (10–10) on large-size LiGaO2 (100) substrates

Nonpolar m-plane ZnO epitaxial film with [10–10] orientation was successfully grown on a large-size (100) LiGaO2 single crystal substrate by chemical vapor deposition method. The dependence of growth characteristics on the different growth conditions was investigated. Following CVD growth, the surface morphologies and epi-film crystallinity were examined by scanning electron microscopy and X-ray diffraction. Room-temperature photoluminescence spectra exhibit a strong near-band-edge emission peak at 377 nm with a negligible green band. Raman spectroscopy showed that the as-grown (10–10) ZnO epilayer on (100) LiGaO2 are under compressive stress. Further structural characterization and defect analysis of nonpolar ZnO material was performed using transmission electron microscopy.