کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669344 | 1008882 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of ultraviolet light exposure on a HfOx RRAM device
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
This paper studies the effect of ultraviolet (UV) light exposure on the resistive switching characteristics of an ITO/HfOx/TiN structure. Unstable and unreliable switching properties are generally observed on the ITO/HfOx/TiN sample. Under the appropriate exposure time, the samples were able to achieve the superior electrical characteristics and reduced resistance dispersion. We suggest that the improvement of switching characteristics and resistance dispersion is related to the oxygen-rich HfO2 layer formed at the M/O interface caused by UV light. This indicates that UV laser exposure is a critical issue in the electrical characteristics of RRAM devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 24, 1 October 2010, Pages 7460–7463
Journal: Thin Solid Films - Volume 518, Issue 24, 1 October 2010, Pages 7460–7463
نویسندگان
Kou-Chen Liu, Wen-Hsien Tzeng, Kow-Ming Chang, Yi-Chun Chan, Chun-Chih Kuo,