Correlation between structural and opto-electronic properties of a-Si1 − xCx:H films deposited by plasma enhanced chemical vapour deposition

Hydrogenated amorphous silicon carbon alloy films of different carbon content were prepared by Plasma Enhanced Chemical Vapor Deposition using silane and methane with helium dilution and were characterized to study their opto-electronic, structural and defective properties. A linear correlation between micro structural disorder and overall disorder has been demonstrated. Further, it has been shown that the increase in the intrinsic disorder leads to an increase in the defect density while the increase in voids results in the decrease in the mass density for the studied films.