کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1670029 1008894 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Residual stress in piezoelectric poly(vinylidene-fluoride-co-trifluoroethylene) thin films deposited on silicon substrates
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Residual stress in piezoelectric poly(vinylidene-fluoride-co-trifluoroethylene) thin films deposited on silicon substrates
چکیده انگلیسی

The residual stress and its evolution with time in poly(vinylidene-fluoride-co-trifluoroethylene) (P(VDF-TrFE) (72/28)) piezoelectric polymer thin films deposited on silicon wafers were investigated using the wafer curvature method. Double-side polished silicon wafers with minimized initial wafer warpage were used to replace single-side polished silicon wafers to obtain significantly improved reliability for the measurement of the low residual stress in the P(VDF-TrFE) polymer thin films. Our measurement results showed that all the P(VDF-TrFE) films possessed a tensile residual stress, and the residual stress slowly decreased with time. Our analysis further indicates that the tensile stress could arise from the thermal mismatch between the P(VDF-TrFE) film and the silicon substrate. Besides possible viscoelastic creep mechanism in thermoplastic P(VDF-TrFE) films, microcracks with widths in the range of tens of nanometers appeared to release the tensile residual stress.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 4, 1 December 2010, Pages 1441–1444
نویسندگان
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