کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1670520 1008901 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Reliability of ultra-thin titanium dioxide (TiO2) films on strained-Si
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Reliability of ultra-thin titanium dioxide (TiO2) films on strained-Si
چکیده انگلیسی

Ultra-thin high-k titanium oxide (equivalent oxide thickness ~ 2.2 nm) films have been deposited on strained-Si/relaxed-Si0.8Ge0.2 heterolayers using titanium tetrakis iso-propoxides (TTIP) as an organometallic source at low temperature (< 200 °C) by plasma enhanced chemical vapor deposition (PECVD) technique in a microwave (700 W, 2.45 GHz) plasma cavity discharge system at a pressure of 66.67 Pa. The trapping/detrapping behavior of charge carriers in ultra-thin TiO2 gate dielectric during constant current (CCS) and voltage stressing (CVS) has been investigated. Normalized trapping centroid and trapped charge density variation with injected fluences have been investigated and also empirically modeled. Oxide lifetime is predicted using empirical reliability model developed. Dielectric breakdown and reliability of the dielectric films have been studied using constant voltage stressing. A high time-dependent dielectric breakdown (TDDB, tbd > 1000 s) is observed under high constant voltage stress.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 1, 3 November 2008, Pages 27–30
نویسندگان
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