Charge trapping characteristics in high-k gate dielectrics on germanium

The results of a comparative study on the charge trapping/detrapping behavior in thin ZrO2 and TiO2 high-k gate dielectrics on p-Ge (100) under stressing in constant current (CCS, 1.02–5.1 C cm− 2) and voltage (CVS, − 5 V to − 7 V) at gate injection mode are presented. Stoichiometric thin films of ZrO2 and TiO2 have been deposited on p-Ge (100) using organometallic sources at relatively low temperature (< 200 °C) by plasma enhanced chemical vapor deposition (PECVD) technique in a microwave (700 W, 2.45 GHz) plasma discharge at a pressure of 66.67 Pa. The effect of stressing on several important interfacial parameters, like, interface state density, fixed oxide charge, oxide charge centroids, and capture cross-section of traps etc. is reported.