کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1670649 1008902 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
How to prevent twin formation in epitaxial ZnO thin films grown on c-plane sapphire
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
How to prevent twin formation in epitaxial ZnO thin films grown on c-plane sapphire
چکیده انگلیسی

Epitaxial ZnO thin films have been grown on (0001) sapphire substrates by pulsed laser deposition. The structural and electrical transport properties of the films are measured as a function of the growth temperature and substrate cleaning procedure. The XRD measurements reveal that the cleaning procedure affects drastically the twin formation. Its origin could be attributed to a residual hydrocarbon layer or defects (oh- or O vacancies) at the sapphire surface. The electrical transport characteristics of the films are found to depend moderately on the existence of twinning.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 16, 1 June 2010, Pages 4630–4633
نویسندگان
, , , ,