کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1670733 | 1008903 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature dependence of Fluorine-doped tin oxide films produced by ultrasonic spray pyrolysis
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Fluorine-doped tin oxide (FTO) films were prepared at different substrate temperatures by ultrasonic spray pyrolysis technique on glass substrates. Among F-doped tin oxide films, the lowest resistivitiy was found to be 6.2 × 10− 4 Ω-cm for a doping percentage of 50 mol% of fluorine in 0.5 M solution, deposited at 400 °C. Hall coefficient analyses and secondary ion mass spectrometry (SIMS) measured the electron carrier concentration that varies from 3.52 × 1020 cm− 3 to 6.21 × 1020 cm− 3 with increasing fluorine content from 4.6 × 1020 cm− 3 to 7.2 × 1020 cm− 3 in FTO films deposited on various temperatures. Deposition temperature on FTO films has been optimized for achieving a minimum resistivity and maximum optical transmittance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 4, 15 December 2009, Pages 1241–1244
Journal: Thin Solid Films - Volume 518, Issue 4, 15 December 2009, Pages 1241–1244
نویسندگان
Chin-Ching Lin, Mei-Ching Chiang, Yu-Wei Chen,