کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1671057 | 1008910 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth process observation of homoepitaxial ZnO thin films using optical emission spectra during pulsed laser deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth process observation of homoepitaxial ZnO thin films using optical emission spectra during pulsed laser deposition Growth process observation of homoepitaxial ZnO thin films using optical emission spectra during pulsed laser deposition](/preview/png/1671057.png)
چکیده انگلیسی
Homoepitaxial ZnO thin films were prepared on the Zn-polar or O-polar ZnO substrates by pulsed laser deposition method. Optical emission spectroscopy of the plume was carried out to estimate O/Zn flux ratio under the various deposition conditions such as oxygen pressure, laser fluence, and the distance between target and substrate. It is revealed that the O/Zn flux ratio could be controlled by laser fluence, oxygen pressure, and target–substrate distance. Zn-rich O/Zn flux promotes pit formation and O-rich flux yields the three-dimensional growth. The difference of the growth process on Zn-polar or O-polar substrates is also discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 11, 31 March 2010, Pages 2971–2974
Journal: Thin Solid Films - Volume 518, Issue 11, 31 March 2010, Pages 2971–2974
نویسندگان
Tatsuru Nakamura, Keiichiro Masuko, Atsushi Ashida, Takeshi Yoshimura, Norifumi Fujimura,