Preparation and conductive properties of neodymium-doped lanthanum nickelate thin films by chemical solution deposition method

Neodymium-doped lanthanum nickelate (La1 − xNdxNiO3, LNNO) thin films have been prepared on Si substrates by chemical solution deposition method. The effects of annealing temperature and the neodymium concentration on the structural and electrical properties of the thin films have been investigated. X-ray diffraction analysis showed that the LNNO thin films exhibited perovskite structure with (100) preferential orientation. The (100) orientation degree of the thin films changed with neodymium content; however, the resistivity of the thin films was not related to the degree of orientation. Field emission scanning electron microscopy observations confirmed that the films had a smooth surface and uniform thickness. The resistivity of the thin films annealed at 700 °C increased from 1.97 mΩ·cm to 5.35 mΩ·cm, with increasing neodymium doping amount from LaNiO3 to La0.6Nd0.4NiO3.