Effect of the substrate temperature on zirconium oxynitride thin films deposited by water vapour–nitrogen radiofrequency magnetron sputtering

ZrNx films were deposited by radiofrequency reactive magnetron sputtering technique in nitrogen and water vapour atmosphere varying the working temperature from room temperature to 600 °C. The films' physical properties were investigated using X-ray diffraction, Secondary Ion Mass Spectroscopy, Atomic Force Microscopy and Transmission Electron Microscopy. It was found that the increase of temperature caused a decrease in the oxygen incorporation and a transition from cubic phase of Zr2ON2 to ZrN one. The formation of nanosized crystalline particles dispersed in the amorphous matrix was observed.