کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1671938 | 1008926 | 2009 | 9 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Oxidation resistance of thin boron carbo-nitride films on Ge(100) and Ge nanowires Oxidation resistance of thin boron carbo-nitride films on Ge(100) and Ge nanowires](/preview/png/1671938.png)
Chemical vapor deposition of thin (< 10 nm) films of amorphous boron carbo-nitride (BC0.7N0.08, or BCN) on Ge(100) and Ge nanowire (GeNW) surfaces was studied to determine the ability of BCN to prevent oxidation of Ge. X-ray photoelectron spectroscopy was used to track Ge oxidation of BCN-covered Ge(100) upon exposure to ambient, 50 °C deionized water, and a 250 °C atomic layer deposition HfO2 process. BCN overlayers incorporate O immediately upon ambient or water exposure, but it is limited to 15% O uptake. If the BCN layer is continuous, the underlying Ge(100) surface is not oxidized despite the incorporation of O into BCN. The minimum continuous BCN film thickness that prevents Ge(100) oxidation is ~ 4 nm. Thinner films (≤ 3.2 nm) permitted Ge(100) oxidation in each of the oxidizing environments studied. GeNWs with a 5.7 nm BCN coating were resistant to oxidation for at least 5 months of ambient exposure. High resolution transmission electron microscopy images of HfO2/BCN/Ge(100) cross-sections and BCN-coated GeNWs reveal clean, abrupt BCN–Ge(100) interfaces.
Journal: Thin Solid Films - Volume 517, Issue 13, 1 May 2009, Pages 3686–3694