کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1672007 | 1008927 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Negative bias-temperature stress in non-self-aligned p-channel polysilicon TFTs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Negative bias-temperature stress in non-self-aligned p-channel polysilicon TFTs Negative bias-temperature stress in non-self-aligned p-channel polysilicon TFTs](/preview/png/1672007.png)
چکیده انگلیسی
The electrical instabilities in p-channel polysilicon TFTs induced by negative bias temperature stress (NBTS) and self-heating have been investigated. From NBTS experiments performed at different temperatures and gate bias, we derived an empirical relationship that provides the T and electric field dependence of the interface state generation. To explain the device instability related to self-heating we considered a spatially non uniform interface state distribution, as a non uniform transverse electric field is present during bias stress. The interface state distribution can be deduced using the empirical relationship, determined from NBTS experiments, and considering the spatial distribution of the oxide electric field, obtained from numerical simulations. Using the so determined interface state distribution it was possible to perfectly reproduce not only the transfer characteristics but also the asymmetry observed in the output characteristics, when source/drain contacts are reverted after bias stress.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 23, 1 October 2009, Pages 6379-6382
Journal: Thin Solid Films - Volume 517, Issue 23, 1 October 2009, Pages 6379-6382
نویسندگان
L. Mariucci, P. Gaucci, A. Valletta, M. Cuscunà , L. Maiolo, A. Pecora, G. Fortunato,