کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1672049 1008928 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy
چکیده انگلیسی

Metalorganic vapour phase epitaxial growth of GaAsBi alloy has been carried out at atmospheric pressure in horizontal geometry reactor. In order to achieve the growth of this alloy, we have investigated the growth conditions which allow epitaxial layers of a good crystalline quality with a maximum bismuth concentration. Growth parameters such as growth temperature, trimethylbismuth (TMBi) flow and V/III ratio were checked on a wide range. Growth temperature was varied between 365 and 450 °C, TMBi flow was checked in the range below 2 µmol/min and V/III ratio was varied between 6 and 20. According to our experimental results based on in-situ reflectivity measurements, scanning electron microscopy observations and high resolution X-ray diffraction analysis, it was found that the maximum Bi concentration reached in GaAs1 − xBix layers was 3.7%. This maximum, relative to atmospheric-pressure metalorganic vapour phase epitaxy technique, was found under a growth temperature of 420 °C, a TMBi flow of 0.2 µmol/min and a V/III ratio of 9.5.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 23, 1 October 2008, Pages 8372–8376
نویسندگان
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